Discrete Semiconductors > Transistors > MOSFETs > JANTX2N6766
JANTX2N6766
| Part Number: | JANTX2N6766 |
| Manufacturer: | International Rectifier |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > JANTX2N6766 |
| Qty Available: | |
| Description: | Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line |
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Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Specifications
| TYPE | DESCRIPTION |
| Mount | Through Hole |
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 85 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 100 mΩ |
| Packaging | Bulk |
| Power Dissipation | 150 W |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 170 ns |
| Turn-On Delay Time | 35 ns |
| Height | 7.74 mm |
Images
Documentation for International Rectifier JANTX2N6766
| Datasheet | View & Download JANTX2N6766 Datasheet |
| Datasheet | View & Download JANTX2N6766 Datasheet |
Alternate Descriptions
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