Discrete Semiconductors > Transistors > MOSFETs > Infineon-SPB07N60C3
Infineon SPB07N60C3
| Part Number: | Infineon SPB07N60C3 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-SPB07N60C3 |
| Qty Available: | |
| Description: | Mosfet Transistor, N Channel, 7.3 A, 650 V, 0.54 Ohm, 10 V, 3 V Rohs Compliant: Yes |
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Mosfet Transistor, N Channel, 7.3 A, 650 V, 0.54 Ohm, 10 V, 3 V Rohs Compliant: Yes
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-263-3 |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 7.3 A |
| Current Rating | 7.3 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 600 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 790 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 83 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 600 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 83 W |
| Rds On Max | 600 mΩ |
| Rise Time | 3.5 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 60 ns |
| Turn-On Delay Time | 6 ns |
| Voltage Rating (DC) | 650 V |
| Height | 4.572 mm |
| Length | 10.31 mm |
| Width | 9.45 mm |
Images
Documentation for Infineon Infineon SPB07N60C3
Alternate Descriptions
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