Discrete Semiconductors > Transistors > IGBTs > Infineon-IRGP50B60PD1PBF
Infineon IRGP50B60PD1PBF
| Part Number: | Infineon IRGP50B60PD1PBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > Infineon-IRGP50B60PD1PBF |
| Qty Available: | |
| Description: | Trans IGBT Chip N-CH 600V 75A 390000mW 3-Pin(3+Tab) TO-247AC Tube |
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Trans IGBT Chip N-CH 600V 75A 390000mW 3-Pin(3+Tab) TO-247AC Tube
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 38.000013 g |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2.35 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Continuous Collector Current | 75 A |
| Current Rating | 75 A |
| Element Configuration | Single |
| Max Collector Current | 75 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 390 W |
| Min Operating Temperature | -55 °C |
| Package Quantity | 400 |
| Packaging | Bulk |
| Power Dissipation | 390 W |
| Reverse Recovery Time | 42 ns |
| Rise Time | 10 ns |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Turn-Off Delay Time | 130 ns |
| Turn-On Delay Time | 30 ns |
| Voltage Rating (DC) | 600 V |
| Height | 20.7 mm |
| Length | 15.87 mm |
| Width | 5.3086 mm |
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Documentation for Infineon Infineon IRGP50B60PD1PBF
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