Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRFZ44VPBF
Infineon IRFZ44VPBF
| Part Number: | Infineon IRFZ44VPBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRFZ44VPBF |
| Qty Available: | |
| Description: | MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 16.5 Milliohms; ID 55A; TO-220AB; PD 115W; -55de |
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MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 16.5 Milliohms; ID 55A; TO-220AB; PD 115W; -55de
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220AB |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 55 A |
| Current Rating | 55 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 16.5 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Dual Supply Voltage | 60 V |
| Element Configuration | Single |
| Fall Time | 57 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.812 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 115 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 16.5 mΩ |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 115 W |
| Rds On Max | 16.5 mΩ |
| Recovery Time | 105 ns |
| Rise Time | 97 ns |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 40 ns |
| Turn-On Delay Time | 13 ns |
| Voltage Rating (DC) | 60 V |
| Height | 8.77 mm |
| Length | 10.668 mm |
| Width | 4.826 mm |
Images
Documentation for Infineon Infineon IRFZ44VPBF
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