Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRFB4020PBF
Infineon IRFB4020PBF
| Part Number: | Infineon IRFB4020PBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRFB4020PBF |
| Qty Available: | |
| Description: | 200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS |
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200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220AB |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 18 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 100 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Dual Supply Voltage | 200 V |
| Element Configuration | Single |
| Fall Time | 6.3 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.2 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 100 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4.9 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 100 mΩ |
| Package Quantity | 1000 |
| Power Dissipation | 100 W |
| Rds On Max | 100 mΩ |
| Recovery Time | 120 ns |
| Resistance | 100 MΩ |
| Rise Time | 12 ns |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Threshold Voltage | 4.9 V |
| Turn-Off Delay Time | 16 ns |
| Turn-On Delay Time | 7.8 ns |
| Height | 9.02 mm |
| Length | 10.6426 mm |
| Width | 4.82 mm |
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Documentation for Infineon Infineon IRFB4020PBF
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