Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRFB31N20DPBF
Infineon IRFB31N20DPBF
| Part Number: | Infineon IRFB31N20DPBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRFB31N20DPBF |
| Qty Available: | |
| Description: | Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V |
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Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 31 A |
| Current Rating | 31 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 82 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Dual Supply Voltage | 200 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 2.37 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 3.1 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 5.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 82 mΩ |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 200 W |
| Rds On Max | 82 mΩ |
| Recovery Time | 300 ns |
| Resistance | 82 mΩ |
| Rise Time | 38 ns |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Threshold Voltage | 5.5 V |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 16 ns |
| Voltage Rating (DC) | 200 V |
| Height | 8.763 mm |
| Length | 10.5156 mm |
| Width | 4.69 mm |
Images
Documentation for Infineon Infineon IRFB31N20DPBF
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