Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRF630NLPBF
Infineon IRF630NLPBF
| Part Number: | Infineon IRF630NLPBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRF630NLPBF |
| Qty Available: | |
| Description: | 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
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200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-262 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 9.3 A |
| Current Rating | 9 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 300 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 575 pF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 82 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 82 W |
| Rds On Max | 300 mΩ |
| Resistance | 300 mΩ |
| Rise Time | 14 ns |
| Turn-Off Delay Time | 27 ns |
| Turn-On Delay Time | 7.9 ns |
| Voltage Rating (DC) | 200 V |
| Height | 9.65 mm |
| Length | 10.668 mm |
| Width | 4.826 mm |
Documentation for Infineon Infineon IRF630NLPBF
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