Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRF5810TR
Infineon IRF5810TR
| Part Number: | Infineon IRF5810TR |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-IRF5810TR |
| Qty Available: | |
| Description: | -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
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-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-23-6 |
| Mount | Surface Mount |
| Continuous Drain Current (ID) | 2.9 A |
| Current Rating | -2.9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance | 650 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 960 mW |
| Min Operating Temperature | -55 °C |
| Rds On Max | 90 mΩ |
| Rise Time | 14 ns |
| Voltage Rating (DC) | -20 V |
Documentation for Infineon Infineon IRF5810TR
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