Discrete Semiconductors > Transistors > MOSFETs > Infineon-IPD50N04S4L08ATMA1
Infineon IPD50N04S4L08ATMA1
| Part Number: | Infineon IPD50N04S4L08ATMA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Infineon-IPD50N04S4L08ATMA1 |
| Qty Available: | |
| Description: | 40V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS |
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40V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Resistance | 6.2 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Fall Time | 18 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.34 nF |
| Max Dual Supply Voltage | 40 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 46 W |
| Min Operating Temperature | -55 °C |
| On-State Resistance | 10.5 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 46 W |
| Rds On Max | 7.3 mΩ |
| Rise Time | 8 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 11 ns |
| Turn-On Delay Time | 4 ns |
Images
Documentation for Infineon Infineon IPD50N04S4L08ATMA1
Alternate Descriptions
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