Discrete Semiconductors > Transistors > IGBTs > Infineon-FF50R12RT4HOSA1
Infineon FF50R12RT4HOSA1
| Part Number: | Infineon FF50R12RT4HOSA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > Infineon-FF50R12RT4HOSA1 |
| Qty Available: | |
| Description: | Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin 34MM-1 Tray |
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Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin 34MM-1 Tray
Specifications
| TYPE | DESCRIPTION |
| Collector Emitter Saturation Voltage | 1.85 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Element Configuration | Dual |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Package Quantity | 10 |
| Power Dissipation | 285 W |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 300 ns |
| Turn-On Delay Time | 130 ns |
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Documentation for Infineon Infineon FF50R12RT4HOSA1
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