Discrete Semiconductors > Transistors > MOSFETs > IRLB8314PBF
IRLB8314PBF
| Part Number: | IRLB8314PBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IRLB8314PBF |
| Qty Available: | |
| Description: | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS |
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30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 171 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 2.6 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 5.05 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 125 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| On-State Resistance | 2.4 mΩ |
| Package Quantity | 1000 |
| Power Dissipation | 125 W |
| Rds On Max | 2.4 mΩ |
| Schedule B | 8541290080 |
| Threshold Voltage | 1.7 V |
| Turn-Off Delay Time | 32 ns |
| Turn-On Delay Time | 19 ns |
| Height | 20.56 mm |
Images
Documentation for Infineon IRLB8314PBF
| Datasheet | View & Download IRLB8314PBF Datasheet |
| Datasheet | View & Download IRLB8314PBF Datasheet |
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