Discrete Semiconductors > Transistors > IGBTs > IRG4PH50SPBF
IRG4PH50SPBF
| Part Number: | IRG4PH50SPBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > IRG4PH50SPBF |
| Qty Available: | |
| Description: | Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube |
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Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-247 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 38.000013 g |
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.75 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 57 A |
| Continuous Drain Current (ID) | 57 A |
| Current Rating | 57 A |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 3.6 nF |
| Max Collector Current | 57 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 200 W |
| Min Operating Temperature | -55 °C |
| Package Quantity | 400 |
| Packaging | Bulk |
| Power Dissipation | 200 W |
| Rise Time | 29 ns |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Turn-Off Delay Time | 845 ns |
| Turn-On Delay Time | 32 ns |
| Voltage Rating (DC) | 1.2 kV |
| Height | 20.3 mm |
| Length | 15.875 mm |
| Width | 5.3 mm |
Documentation for Infineon IRG4PH50SPBF
| Datasheet | View & Download IRG4PH50SPBF Datasheet |
| Datasheet | View & Download IRG4PH50SPBF Datasheet |
| Datasheet | View & Download IRG4PH50SPBF Datasheet |
| Datasheet | View & Download IRG4PH50SPBF Datasheet |
| Datasheet | View & Download IRG4PH50SPBF Datasheet |
| Datasheet | View & Download IRG4PH50SPBF Datasheet |
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