Discrete Semiconductors > Transistors > MOSFETs > IRFPS3810PBF
IRFPS3810PBF
| Part Number: | IRFPS3810PBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IRFPS3810PBF |
| Qty Available: | |
| Description: | MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.009Ohm; ID 170A; Super-247; PD 580W; gFS 52S |
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MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.009Ohm; ID 170A; Super-247; PD 580W; gFS 52S
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-247 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 170 A |
| Current Rating | 170 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 9 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Dual Supply Voltage | 100 V |
| Element Configuration | Single |
| Fall Time | 140 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 6.79 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 580 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 5 V |
| Number of Elements | 1 |
| On-State Resistance | 9 mΩ |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 441 W |
| Rds On Max | 9 mΩ |
| Recovery Time | 330 ns |
| Resistance | 9 Ω |
| Rise Time | 270 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 24 ns |
| Voltage Rating (DC) | 100 V |
| Height | 20.8 mm |
| Length | 16.0782 mm |
| Width | 5.3 mm |
Images
Documentation for Infineon IRFPS3810PBF
| Datasheet | View & Download IRFPS3810PBF Datasheet |
| Datasheet | View & Download IRFPS3810PBF Datasheet |
| Datasheet | View & Download IRFPS3810PBF Datasheet |
| Datasheet | View & Download IRFPS3810PBF Datasheet |
| Datasheet | View & Download IRFPS3810PBF Datasheet |
| Datasheet | View & Download IRFPS3810PBF Datasheet |
Alternate Descriptions
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