Discrete Semiconductors > Transistors > MOSFETs > IRFP4668PBF
IRFP4668PBF
| Part Number: | IRFP4668PBF |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IRFP4668PBF |
| Qty Available: | |
| Description: | IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC |
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IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-247-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 130 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 8 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Dual Supply Voltage | 200 V |
| Element Configuration | Single |
| Fall Time | 74 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 10.72 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 520 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 9.7 mΩ |
| Package Quantity | 400 |
| Power Dissipation | 520 W |
| Rds On Max | 9.7 mΩ |
| Resistance | 9.7 MΩ |
| Rise Time | 105 ns |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Threshold Voltage | 5 V |
| Turn-Off Delay Time | 64 ns |
| Turn-On Delay Time | 41 ns |
| Height | 20.7 mm |
| Length | 15.87 mm |
| Width | 5.3086 mm |
Documentation for Infineon IRFP4668PBF
| Datasheet | View & Download IRFP4668PBF Datasheet |
| Datasheet | View & Download IRFP4668PBF Datasheet |
| Datasheet | View & Download IRFP4668PBF Datasheet |
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