Discrete Semiconductors > Transistors > MOSFETs > IRFD9120
IRFD9120
Part Number: | IRFD9120 |
Manufacturer: | Vishay Siliconix |
Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IRFD9120 |
Qty Available: | |
Description: | Tube Through Hole P-Channel MOSFET (Metal Oxide) Mosfet Transistor 1A Ta 1A 1.3W 29ns |
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Tube Through Hole P-Channel MOSFET (Metal Oxide) Mosfet Transistor 1A Ta 1A 1.3W 29ns
Specifications
TYPE | DESCRIPTION |
Case/Package | DIP |
Mount | Through Hole |
Number of Pins | 4 |
Continuous Drain Current (ID) | 1 A |
Drain to Source Breakdown Voltage | -100 V |
Drain to Source Resistance | 600 mΩ |
Drain to Source Voltage (Vdss) | 100 V |
Fall Time | 29 ns |
Gate to Source Voltage (Vgs) | 20 V |
Input Capacitance | 390 pF |
Max Operating Temperature | 175 °C |
Max Power Dissipation | 1.3 W |
Min Operating Temperature | -55 °C |
Nominal Vgs | -4 V |
Number of Channels | 1 |
Number of Elements | 1 |
Packaging | Bulk |
Power Dissipation | 1.3 W |
Rds On Max | 600 mΩ |
Rise Time | 29 ns |
Turn-Off Delay Time | 21 ns |
Turn-On Delay Time | 9.6 ns |
Height | 3.37 mm |
Length | 5 mm |
Width | 6.29 mm |
Documentation for Vishay Siliconix IRFD9120
Datasheet | View & Download IRFD9120 Datasheet |
Datasheet | View & Download IRFD9120 Datasheet |
Datasheet | View & Download IRFD9120 Datasheet |
Datasheet | View & Download IRFD9120 Datasheet |
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