Discrete Semiconductors > Transistors > IRF640S
IRF640S
| Part Number: | IRF640S |
| Manufacturer: | Vishay Siliconix |
| Part Type: | Discrete Semiconductors > Transistors > IRF640S |
| Qty Available: | |
| Description: | N-channel TrenchMOS transistor | MOSFET N-CH 200V 18A D2PAK |
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N-channel TrenchMOS transistor | MOSFET N-CH 200V 18A D2PAK
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Weight | 2.240009 g |
| Continuous Drain Current (ID) | 18 A |
| Current Rating | 18 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 180 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 36 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.3 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 130 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Packaging | Bulk |
| Rds On Max | 180 mΩ |
| Resistance | 180 mΩ |
| Rise Time | 51 ns |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 14 ns |
| Voltage Rating (DC) | 200 V |
| Height | 4.83 mm |
| Length | 10.67 mm |
| Width | 9.65 mm |
Documentation for Vishay Siliconix IRF640S
| Datasheet | View & Download IRF640S Datasheet |
| Datasheet | View & Download IRF640S Datasheet |
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