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           Discrete Semiconductors > Transistors > MOSFETs > IRF610

IRF610

Part Number: IRF610
Manufacturer: Vishay
Part Type: Discrete Semiconductors > Transistors > MOSFETs > IRF610
Qty Available:
Description: N-Channel Power MOSFETs, 3.5A, 150-200V | MOSFET N-CH 200V 3.3A TO-220AB

04/23/2026 – There are 515 pieces pieces of Part Number IRF610 Available.

PCX has Vishay Discrete Semiconductors > Transistors > MOSFETs > IRF610 Electronic Components for Sale.

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N-Channel Power MOSFETs, 3.5A, 150-200V | MOSFET N-CH 200V 3.3A TO-220AB

Specifications

TYPE DESCRIPTION
Case/Package TO-220-3
Mount Through Hole
Number of Pins 3
Weight 6.000006 g
Continuous Drain Current (ID) 3.3 A
Current Rating 3.3 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 1.5 Ω
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Fall Time 8.9 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 140 pF
Max Operating Temperature 150 °C
Max Power Dissipation 36 W
Min Operating Temperature -55 °C
Nominal Vgs 4 V
Number of Channels 1
Number of Elements 1
Packaging Bulk
Power Dissipation 3 W
Rds On Max 1.5 Ω
Rise Time 17 ns
Turn-Off Delay Time 14 ns
Turn-On Delay Time 8.2 ns
Voltage Rating (DC) 200 V
Height 9.01 mm
Length 10.41 mm
Width 4.7 mm
Case/Package TO-220-3
Mount Through Hole
Number of Pins 3
Weight 6.000006 g
Continuous Drain Current (ID) 3.3 A
Current Rating 3.3 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 1.5 Ω
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Fall Time 8.9 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 140 pF
Max Operating Temperature 150 °C
Max Power Dissipation 36 W
Min Operating Temperature -55 °C
Nominal Vgs 4 V
Number of Channels 1
Number of Elements 1
Packaging Bulk
Power Dissipation 3 W
Rds On Max 1.5 Ω
Rise Time 17 ns
Turn-Off Delay Time 14 ns
Turn-On Delay Time 8.2 ns
Voltage Rating (DC) 200 V
Height 9.01 mm
Length 10.41 mm
Width 4.7 mm

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