Discrete Semiconductors > Transistors > MOSFETs > IPT015N10N5ATMA1

IPT015N10N5ATMA1

Infineon

Part Number:	IPT015N10N5ATMA1
Manufacturer:	Infineon
Part Type:	Discrete Semiconductors > Transistors > MOSFETs > IPT015N10N5ATMA1
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Description:	Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS Power Mosfet - HSOF-8-1

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Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS Power Mosfet - HSOF-8-1

Specifications

TYPE	DESCRIPTION
Mount	Surface Mount
Number of Pins	8
Continuous Drain Current (ID)	300 A
Drain to Source Resistance	2 mΩ
Drain to Source Voltage (Vdss)	100 V
Element Configuration	Single
Fall Time	30 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	12 nF
Max Dual Supply Voltage	100 V
Max Operating Temperature	175 °C
Max Power Dissipation	375 W
Manufacturer Package Identifier	PG-HSOF-8
Min Operating Temperature	-55 °C
Number of Channels	1
On-State Resistance	1.5 mΩ
Package Quantity	2000
Packaging	Tape & Reel
Power Dissipation	375 W
Rds On Max	1.5 mΩ
Rise Time	30 ns
Schedule B	8541290080
Turn-Off Delay Time	85 ns
Turn-On Delay Time	36 ns
Mount	Surface Mount
Number of Pins	8
Continuous Drain Current (ID)	300 A
Drain to Source Resistance	2 mΩ
Drain to Source Voltage (Vdss)	100 V
Element Configuration	Single
Fall Time	30 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	12 nF
Max Dual Supply Voltage	100 V
Max Operating Temperature	175 °C
Max Power Dissipation	375 W
Manufacturer Package Identifier	PG-HSOF-8
Min Operating Temperature	-55 °C
Number of Channels	1
On-State Resistance	1.5 mΩ
Package Quantity	2000
Packaging	Tape & Reel
Power Dissipation	375 W
Rds On Max	1.5 mΩ
Rise Time	30 ns
Schedule B	8541290080
Turn-Off Delay Time	85 ns
Turn-On Delay Time	36 ns

Images

Documentation for Infineon IPT015N10N5ATMA1

Datasheet	View & Download IPT015N10N5ATMA1 Datasheet
Datasheet	View & Download IPT015N10N5ATMA1 Datasheet
Datasheet	View & Download IPT015N10N5ATMA1 Datasheet
Datasheet	View & Download IPT015N10N5ATMA1 Datasheet

Alternate Descriptions

Descriptions of Infineon IPT015N10N5ATMA1 provided by its distributors.
Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS Power Mosfet - HSOF-8-1
Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R
MOSFET, N-CH, 100V, 300A, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Source Voltage Vds:100V; On Resistance
Mosfet, N-Ch, 100V, 300A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:300A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPT015N10N5ATMA1
MOSFET, N-CH, 100V, 300A, HSOF; Transistor Polarity: N Channel; Continuous Drain Current Id: 300A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: HSOF; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
Descriptions of Infineon IPT015N10N5ATMA1 provided by its distributors.
Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS Power Mosfet - HSOF-8-1
Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R
MOSFET, N-CH, 100V, 300A, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Source Voltage Vds:100V; On Resistance
Mosfet, N-Ch, 100V, 300A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:300A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPT015N10N5ATMA1
MOSFET, N-CH, 100V, 300A, HSOF; Transistor Polarity: N Channel; Continuous Drain Current Id: 300A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: HSOF; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPT015N10N5ATMA1

Infineon

Specifications

Images

Documentation for Infineon IPT015N10N5ATMA1

Alternate Descriptions

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