Discrete Semiconductors > Transistors > MOSFETs > IPP220N25NFDAKSA1

IPP220N25NFDAKSA1

Infineon

Part Number:	IPP220N25NFDAKSA1
Manufacturer:	Infineon
Part Type:	Discrete Semiconductors > Transistors > MOSFETs > IPP220N25NFDAKSA1
Qty Available:
Description:	N-Channel 250 V 61 A 300 W SMT OptiMOSTMFD Power-Transistor - PG-TO220-3

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04/21/2026 – There are 515 pieces pieces of Part Number IPP220N25NFDAKSA1 Available.

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N-Channel 250 V 61 A 300 W SMT OptiMOSTMFD Power-Transistor - PG-TO220-3

Specifications

TYPE	DESCRIPTION
Case/Package	TO-220
Mount	Through Hole
Number of Pins	3
Weight	6.000006 g
Continuous Drain Current (ID)	61 A
Drain to Source Resistance	19 mΩ
Drain to Source Voltage (Vdss)	250 V
Element Configuration	Single
Fall Time	8 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	5.32 nF
Max Dual Supply Voltage	250 V
Max Operating Temperature	175 °C
Max Power Dissipation	300 W
Min Operating Temperature	-55 °C
Number of Channels	1
On-State Resistance	22 mΩ
Package Quantity	500
Power Dissipation	300 W
Rds On Max	22 mΩ
Rise Time	10 ns
Schedule B	8541290080
Turn-Off Delay Time	26 ns
Turn-On Delay Time	14 ns

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Datasheet

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Alternate Descriptions

Descriptions of Infineon IPP220N25NFDAKSA1 provided by its distributors.
N-Channel 250 V 61 A 300 W SMT OptiMOSTMFD Power-Transistor - PG-TO220-3
Trans MOSFET N-CH 250V 61A 3-Pin(3+Tab) TO-220 Tube
MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Source Voltage Vds:250V; On Resistance
Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 250V, 61A, 175Deg C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:61A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPP220N25NFDAKSA1
MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 61A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS FD Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 61 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter

IPP220N25NFDAKSA1

Infineon

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Documentation for Infineon IPP220N25NFDAKSA1

Alternate Descriptions

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