Discrete Semiconductors > Transistors > MOSFETs > IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1
| Part Number: | IPD90P04P4L04ATMA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IPD90P04P4L04ATMA1 |
| Qty Available: | |
| Description: | Infineon IPD90P04P4L-04 P-channel MOSFET Transistor, 90 A, 40 V, 3-Pin TO-252 |
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Infineon IPD90P04P4L-04 P-channel MOSFET Transistor, 90 A, 40 V, 3-Pin TO-252
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | -90 A |
| Drain to Source Breakdown Voltage | -40 V |
| Drain to Source Resistance | 5.1 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Fall Time | 60 ns |
| Gate to Source Voltage (Vgs) | 16 V |
| Input Capacitance | 11.57 nF |
| Max Dual Supply Voltage | -40 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 125 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 4.3 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 125 W |
| Rds On Max | 4.3 mΩ |
| Schedule B | 8541290080 |
| Threshold Voltage | -1.7 V |
| Turn-Off Delay Time | 140 ns |
| Turn-On Delay Time | 20 ns |
| Height | 2.35 mm |
Documentation for Infineon IPD90P04P4L04ATMA1
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