Discrete Semiconductors > Transistors > MOSFETs > IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1
| Part Number: | IPD60N10S4L12ATMA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IPD60N10S4L12ATMA1 |
| Qty Available: | |
| Description: | IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313 |
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IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Weight | 3.949996 g |
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 9.8 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 21 ns |
| Gate to Source Voltage (Vgs) | 16 V |
| Input Capacitance | 3.17 nF |
| Max Dual Supply Voltage | 100 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 94 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| On-State Resistance | 12 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 94 W |
| Rds On Max | 12 mΩ |
| Rise Time | 3 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 4 ns |
Images
Documentation for Infineon IPD60N10S4L12ATMA1
Alternate Descriptions
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