Discrete Semiconductors > Transistors > MOSFETs > IPD12CN10NGATMA1
IPD12CN10NGATMA1
| Part Number: | IPD12CN10NGATMA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > IPD12CN10NGATMA1 |
| Qty Available: | |
| Description: | Single N-Channel 100 V 12.4 mOhm 49 nC OptiMOS Power Mosfet - TO-252-3 |
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Single N-Channel 100 V 12.4 mOhm 49 nC OptiMOS Power Mosfet - TO-252-3
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-252-3 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 67 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 12.4 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 3.25 nF |
| Max Dual Supply Voltage | 100 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 125 W |
| Min Operating Temperature | -55 °C |
| On-State Resistance | 12.4 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 125 W |
| Rds On Max | 12.4 mΩ |
| Rise Time | 21 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 32 ns |
| Turn-On Delay Time | 17 ns |
Images
Documentation for Infineon IPD12CN10NGATMA1
| Datasheet | View & Download IPD12CN10NGATMA1 Datasheet |
| Datasheet | View & Download IPD12CN10NGATMA1 Datasheet |
| Datasheet | View & Download IPD12CN10NGATMA1 Datasheet |
| Datasheet | View & Download IPD12CN10NGATMA1 Datasheet |
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