Discrete Semiconductors > Transistors > MOSFETs > IPB015N08N5ATMA1

IPB015N08N5ATMA1

Infineon

Part Number:	IPB015N08N5ATMA1
Manufacturer:	Infineon
Part Type:	Discrete Semiconductors > Transistors > MOSFETs > IPB015N08N5ATMA1
Qty Available:
Description:	Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

Get Quote

04/21/2026 – There are 515 pieces pieces of Part Number IPB015N08N5ATMA1 Available.

PCX has Infineon Discrete Semiconductors > Transistors > MOSFETs > IPB015N08N5ATMA1 Electronic Components for Sale.

Pacific Component Xchange specializes in solving challenges such as supply chain procurement, hard to find, long lead time, obsolete, cost savings, kanban and scheduled orders.

Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

Specifications

TYPE	DESCRIPTION
Case/Package	TO-263-7
Mount	Surface Mount
Number of Pins	7
Weight	1.59999 g
Continuous Drain Current (ID)	180 A
Drain to Source Breakdown Voltage	80 V
Drain to Source Resistance	1.1 mΩ
Drain to Source Voltage (Vdss)	80 V
Element Configuration	Single
Fall Time	28 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	13 nF
Max Dual Supply Voltage	80 V
Max Junction Temperature (Tj)	175 °C
Max Operating Temperature	175 °C
Max Power Dissipation	375 W
Min Operating Temperature	-55 °C
Number of Channels	1
On-State Resistance	1.5 mΩ
Package Quantity	1000
Packaging	Tape & Reel
Power Dissipation	375 W
Rds On Max	1.5 mΩ
Rise Time	32 ns
Schedule B	8541290080
Turn-Off Delay Time	83 ns
Turn-On Delay Time	33 ns
Height	4.5 mm
Case/Package	TO-263-7
Mount	Surface Mount
Number of Pins	7
Weight	1.59999 g
Continuous Drain Current (ID)	180 A
Drain to Source Breakdown Voltage	80 V
Drain to Source Resistance	1.1 mΩ
Drain to Source Voltage (Vdss)	80 V
Element Configuration	Single
Fall Time	28 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	13 nF
Max Dual Supply Voltage	80 V
Max Junction Temperature (Tj)	175 °C
Max Operating Temperature	175 °C
Max Power Dissipation	375 W
Min Operating Temperature	-55 °C
Number of Channels	1
On-State Resistance	1.5 mΩ
Package Quantity	1000
Packaging	Tape & Reel
Power Dissipation	375 W
Rds On Max	1.5 mΩ
Rise Time	32 ns
Schedule B	8541290080
Turn-Off Delay Time	83 ns
Turn-On Delay Time	33 ns
Height	4.5 mm

Images

Documentation for Infineon IPB015N08N5ATMA1

Datasheet	View & Download IPB015N08N5ATMA1 Datasheet
Datasheet	View & Download IPB015N08N5ATMA1 Datasheet

Alternate Descriptions

Descriptions of Infineon IPB015N08N5ATMA1 provided by its distributors.
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
IPB015N08N5 Series 80 V 180 A OptiMOS 5 Power Transistor - PG-TO-263-7
MOSFET, N-CH, 80V, 180A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK 7pin package, PG-TO263-7, RoHS
Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
Descriptions of Infineon IPB015N08N5ATMA1 provided by its distributors.
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
IPB015N08N5 Series 80 V 180 A OptiMOS 5 Power Transistor - PG-TO-263-7
MOSFET, N-CH, 80V, 180A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK 7pin package, PG-TO263-7, RoHS
Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB015N08N5ATMA1

Infineon

Specifications

Images

Documentation for Infineon IPB015N08N5ATMA1

Alternate Descriptions

Title

FAQ’s

What is the part number of the product?

What is the voltage rating of the MOSFET?

What is the maximum continuous drain current of the MOSFET?

What is the package type of the MOSFET?

What is the part number of the product?

What is the package type of the MOSFET?

What is the voltage rating of the MOSFET?

What is the maximum continuous drain current of the MOSFET?

Electronic Component Search