Discrete Semiconductors > Transistors > IFS150B12N3E4P-B11
IFS150B12N3E4P_B11
| Part Number: | IFS150B12N3E4P_B11 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > IFS150B12N3E4P-B11 |
| Qty Available: | |
| Description: | Insulated Gate Bipolar Transistors |
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Insulated Gate Bipolar Transistors
Specifications
| TYPE | DESCRIPTION |
| Collector Emitter Saturation Voltage | 1.75 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 220 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Power Dissipation | 750 W |
| Turn-Off Delay Time | 400 ns |
| Turn-On Delay Time | 190 ns |
| Height | 17.5 mm |
Documentation for Infineon IFS150B12N3E4P_B11
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