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           Discrete Semiconductors > Transistors > MOSFETs > FQP27P06

FQP27P06

Part Number: FQP27P06
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FQP27P06
Qty Available:
Description: Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, TO-220

04/23/2026 – There are 515 pieces pieces of Part Number FQP27P06 Available.

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Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, TO-220

Specifications

TYPE DESCRIPTION
Case/Package TO-220
Contact Plating Tin
Mount Through Hole
Number of Pins 3
Weight 1.8 g
Continuous Drain Current (ID) 27 A
Current Rating -27 A
Drain to Source Breakdown Voltage -60 V
Drain to Source Resistance 70 mΩ
Drain to Source Voltage (Vdss) 60 V
Dual Supply Voltage -60 V
Element Configuration Single
Fall Time 90 ns
Gate to Source Voltage (Vgs) 25 V
Input Capacitance 1.4 nF
Max Operating Temperature 175 °C
Max Power Dissipation 120 W
Min Operating Temperature -55 °C
Nominal Vgs -4 V
Number of Elements 1
Power Dissipation 120 W
Rds On Max 70 mΩ
Resistance 70 mΩ
Rise Time 185 ns
Schedule B 8541290080
Threshold Voltage -4 V
Turn-Off Delay Time 30 ns
Turn-On Delay Time 18 ns
Voltage Rating (DC) -60 V
Height 6.35 mm
Length 6.35 mm
Width 9.9 mm

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