Discrete Semiconductors > Transistors > MOSFETs > FQD2N100TM
FQD2N100TM
| Part Number: | FQD2N100TM |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > FQD2N100TM |
| Qty Available: | |
| Description: | N-channel Power Mosfet, Qfet®, 1000 V, 1.6 A, 9 Ω, Dpak |
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N-channel Power Mosfet, Qfet®, 1000 V, 1.6 A, 9 Ω, Dpak
Specifications
| TYPE | DESCRIPTION |
| Case/Package | DPAK |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Weight | 260.37 mg |
| Continuous Drain Current (ID) | 1.6 A |
| Current Rating | 1.6 A |
| Drain to Source Breakdown Voltage | 1 kV |
| Drain to Source Resistance | 7.1 Ω |
| Drain to Source Voltage (Vdss) | 1 kV |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 520 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5 W |
| Rds On Max | 9 Ω |
| Resistance | 9 Ω |
| Rise Time | 30 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 5 V |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 13 ns |
| Voltage Rating (DC) | 900 V |
| Height | 2.3 mm |
| Length | 6.6 mm |
| Width | 6.1 mm |
Images
Documentation for onsemi FQD2N100TM
Alternate Descriptions
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