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           Discrete Semiconductors > Transistors > MOSFETs > FQD17P06TM

FQD17P06TM

Part Number: FQD17P06TM
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FQD17P06TM
Qty Available:
Description: P-Channel Power MOSFET, QFET®, -60 V, -12 A, 135 mΩ, DPAK

04/23/2026 – There are 515 pieces pieces of Part Number FQD17P06TM Available.

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P-Channel Power MOSFET, QFET®, -60 V, -12 A, 135 mΩ, DPAK

Specifications

TYPE DESCRIPTION
Case/Package DPAK
Contact Plating Tin
Mount Surface Mount
Number of Pins 3
Weight 260.37 mg
Continuous Drain Current (ID) -12 A
Current Rating -12 A
Drain to Source Breakdown Voltage -60 V
Drain to Source Resistance 110 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Fall Time 60 ns
Gate to Source Voltage (Vgs) 25 V
Input Capacitance 900 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Power Dissipation 2.5 W
Rds On Max 135 mΩ
Resistance 135 mΩ
Rise Time 100 ns
Schedule B 8541290080
Threshold Voltage -4 V
Turn-Off Delay Time 22 ns
Turn-On Delay Time 13 ns
Voltage Rating (DC) -60 V
Height 2.39 mm
Length 6.73 mm
Width 6.22 mm

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