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           Discrete Semiconductors > Transistors > MOSFETs > FQD12N20LTM

FQD12N20LTM

Part Number: FQD12N20LTM
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FQD12N20LTM
Qty Available:
Description: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

04/23/2026 – There are 515 pieces pieces of Part Number FQD12N20LTM Available.

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N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

Specifications

TYPE DESCRIPTION
Case/Package DPAK
Mount Surface Mount
Number of Pins 3
Weight 260.37 mg
Continuous Drain Current (ID) 9 A
Current Rating 9 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 280 mΩ
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Fall Time 120 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 1.08 nF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Nominal Vgs 2 V
Number of Channels 1
Number of Elements 1
Power Dissipation 2.5 W
Rds On Max 280 mΩ
Resistance 280 mΩ
Rise Time 190 ns
Schedule B 8541290080
Threshold Voltage 2 V
Turn-Off Delay Time 60 ns
Turn-On Delay Time 15 ns
Voltage Rating (DC) 200 V
Height 2.3 mm
Length 6.6 mm
Width 6.1 mm

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