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           Discrete Semiconductors > Transistors > MOSFETs > FQD11P06TM

FQD11P06TM

Part Number: FQD11P06TM
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FQD11P06TM
Qty Available:
Description: Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK

04/23/2026 – There are 515 pieces pieces of Part Number FQD11P06TM Available.

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Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK

Specifications

TYPE DESCRIPTION
Case/Package DPAK
Mount Surface Mount
Number of Pins 3
Weight 260.37 mg
Continuous Drain Current (ID) -9.4 A
Current Rating -9.4 A
Drain to Source Breakdown Voltage -60 V
Drain to Source Resistance 150 mΩ
Drain to Source Voltage (Vdss) -60 V
Element Configuration Single
Fall Time 45 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 550 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Power Dissipation 2.5 W
Rds On Max 185 mΩ
Resistance 185 mΩ
Rise Time 40 ns
Schedule B 8541290080
Threshold Voltage -4 V
Turn-Off Delay Time 15 ns
Turn-On Delay Time 6.5 ns
Voltage Rating (DC) -60 V
Height 2.3 mm
Length 6.6 mm
Width 6.1 mm

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