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           Discrete Semiconductors > Transistors > MOSFETs > FQB5N90TM

FQB5N90TM

Part Number: FQB5N90TM
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FQB5N90TM
Qty Available:
Description: N-Channel Power MOSFET, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK

04/23/2026 – There are 515 pieces pieces of Part Number FQB5N90TM Available.

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N-Channel Power MOSFET, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK

Specifications

TYPE DESCRIPTION
Case/Package TO-263
Contact Plating Tin
Mount Surface Mount
Number of Pins 3
Weight 1.31247 g
Continuous Drain Current (ID) 5.4 A
Current Rating 5.4 A
Drain to Source Breakdown Voltage 900 V
Drain to Source Resistance 1.8 Ω
Drain to Source Voltage (Vdss) 900 V
Element Configuration Single
Fall Time 50 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 1.55 nF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 158 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Power Dissipation 3.13 W
Rds On Max 2.3 Ω
Resistance 2.3 Ω
Rise Time 65 ns
Schedule B 8541290080
Threshold Voltage 3 V
Turn-Off Delay Time 65 ns
Turn-On Delay Time 28 ns
Voltage Rating (DC) 900 V
Height 4.83 mm
Length 10.67 mm
Width 9.65 mm

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