Discrete Semiconductors > Transistors > IGBTs > FGL60N100BNTD
FGL60N100BNTD
| Part Number: | FGL60N100BNTD |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > FGL60N100BNTD |
| Qty Available: | |
| Description: | IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube |
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IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-264 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 6.756 g |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.5 V |
| Collector Emitter Voltage (VCEO) | 1 kV |
| Current Rating | 60 A |
| Element Configuration | Single |
| Max Breakdown Voltage | 1 kV |
| Max Collector Current | 60 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 180 W |
| Min Operating Temperature | -55 °C |
| Polarity | NPN |
| Power Dissipation | 180 W |
| Reverse Recovery Time | 1.2 µs |
| Rise Time | 320 ns |
| Schedule B | 8541290080 |
| Voltage Rating (DC) | 1 kV |
| Height | 26 mm |
| Length | 20 mm |
| Width | 5 mm |
| Case/Package | TO-264 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 6.756 g |
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.5 V |
| Collector Emitter Voltage (VCEO) | 1 kV |
| Current Rating | 60 A |
| Element Configuration | Single |
| Max Breakdown Voltage | 1 kV |
| Max Collector Current | 60 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 180 W |
| Min Operating Temperature | -55 °C |
| Polarity | NPN |
| Power Dissipation | 180 W |
| Reverse Recovery Time | 1.2 µs |
| Rise Time | 320 ns |
| Schedule B | 8541290080 |
| Voltage Rating (DC) | 1 kV |
| Height | 26 mm |
| Length | 20 mm |
| Width | 5 mm |
Images
Documentation for onsemi FGL60N100BNTD
Alternate Descriptions
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