Discrete Semiconductors > Transistors > IGBTs > FF900R12IP4DBOSA2
FF900R12IP4DBOSA2
| Part Number: | FF900R12IP4DBOSA2 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > FF900R12IP4DBOSA2 |
| Qty Available: | |
| Description: | Igbt, H/b Ntc, 1200V, 900A, Primepa |
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Igbt, H/b Ntc, 1200V, 900A, Primepa
Specifications
| TYPE | DESCRIPTION |
| Case/Package | Module |
| Mount | Screw |
| Number of Pins | 2 |
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.7 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Element Configuration | Dual |
| Max Collector Current | 900 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5.1 kW |
| Min Operating Temperature | -40 °C |
| Package Quantity | 3 |
Documentation for Infineon FF900R12IP4DBOSA2
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