Discrete Semiconductors > Transistors > IGBTs > FF450R12ME4BOSA1
FF450R12ME4BOSA1
| Part Number: | FF450R12ME4BOSA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > IGBTs > FF450R12ME4BOSA1 |
| Qty Available: | |
| Description: | Trans IGBT Module N=-CH 1200V 675A 2250000mW 11-Pin Tray |
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Trans IGBT Module N=-CH 1200V 675A 2250000mW 11-Pin Tray
Specifications
| TYPE | DESCRIPTION |
| Collector Emitter Saturation Voltage | 1.75 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 675 A |
| Element Configuration | Dual |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Package Quantity | 10 |
| Power Dissipation | 2.25 kW |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 490 ns |
| Turn-On Delay Time | 190 ns |
| Height | 17.5 mm |
Images
Documentation for Infineon FF450R12ME4BOSA1
| Datasheet | View & Download FF450R12ME4BOSA1 Datasheet |
| Datasheet | View & Download FF450R12ME4BOSA1 Datasheet |
| Datasheet | View & Download FF450R12ME4BOSA1 Datasheet |
| Datasheet | View & Download FF450R12ME4BOSA1 Datasheet |
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