Discrete Semiconductors > Transistors > MOSFETs > FDP18N50
FDP18N50
| Part Number: | FDP18N50 |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > FDP18N50 |
| Qty Available: | |
| Description: | N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220 |
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N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 18 A |
| Current | 18 A |
| Current Rating | 18 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 265 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 90 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 2.86 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 235 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 235 W |
| Rds On Max | 265 mΩ |
| Resistance | 265 MΩ |
| Rise Time | 165 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 5 V |
| Turn-Off Delay Time | 95 ns |
| Turn-On Delay Time | 55 ns |
| Voltage | 500 V |
| Voltage Rating (DC) | 500 V |
| Height | 9.4 mm |
| Length | 10.1 mm |
| Width | 4.7 mm |
Images
Documentation for onsemi FDP18N50
Alternate Descriptions
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