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           Discrete Semiconductors > Transistors > MOSFETs > FDC5612

FDC5612

Part Number: FDC5612
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FDC5612
Qty Available:
Description: N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ

04/23/2026 – There are 515 pieces pieces of Part Number FDC5612 Available.

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N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ

Specifications

TYPE DESCRIPTION
Case/Package SOT-23-6
Contact Plating Tin
Mount Surface Mount
Number of Pins 6
Weight 36 mg
Continuous Drain Current (ID) 4.3 A
Current Rating 4.3 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 55 mΩ
Drain to Source Voltage (Vdss) 60 V
Dual Supply Voltage 60 V
Element Configuration Single
Fall Time 8 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 650 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 1.6 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 1.6 W
Rds On Max 55 mΩ
Resistance 55 mΩ
Rise Time 8 ns
Schedule B 8541290080
Threshold Voltage 2.2 V
Turn-Off Delay Time 19 ns
Turn-On Delay Time 11 ns
Voltage Rating (DC) 60 V
Height 1 mm
Length 3 mm
Width 1.7 mm
Case/Package SOT-23-6
Contact Plating Tin
Mount Surface Mount
Number of Pins 6
Weight 36 mg
Continuous Drain Current (ID) 4.3 A
Current Rating 4.3 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 55 mΩ
Drain to Source Voltage (Vdss) 60 V
Dual Supply Voltage 60 V
Element Configuration Single
Fall Time 8 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 650 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 1.6 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 1.6 W
Rds On Max 55 mΩ
Resistance 55 mΩ
Rise Time 8 ns
Schedule B 8541290080
Threshold Voltage 2.2 V
Turn-Off Delay Time 19 ns
Turn-On Delay Time 11 ns
Voltage Rating (DC) 60 V
Height 1 mm
Length 3 mm
Width 1.7 mm

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