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           Discrete Semiconductors > Transistors > MOSFETs > FDC3535

FDC3535

Part Number: FDC3535
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FDC3535
Qty Available:
Description: P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ

04/23/2026 – There are 515 pieces pieces of Part Number FDC3535 Available.

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P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ

Specifications

TYPE DESCRIPTION
Case/Package SOT-23-6
Mount Surface Mount
Number of Pins 6
Weight 36 mg
Continuous Drain Current (ID) -2.1 A
Drain to Source Breakdown Voltage -80 V
Drain to Source Resistance 147 mΩ
Drain to Source Voltage (Vdss) -80 V
Element Configuration Single
Fall Time 2.9 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 880 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 1.6 W
Min Operating Temperature -55 °C
Nominal Vgs -1.6 V
Number of Channels 1
Number of Elements 1
Packaging Tape and Reel
Power Dissipation 1.6 W
Rds On Max 183 mΩ
Rise Time 3.1 ns
Schedule B 8541290080
Threshold Voltage -1.6 V
Turn-Off Delay Time 23 ns
Turn-On Delay Time 6.5 ns
Height 1 mm
Length 3 mm
Width 1.7 mm

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