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           Discrete Semiconductors > Transistors > MOSFETs > FDB3632

FDB3632

Part Number: FDB3632
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FDB3632
Qty Available:
Description: N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

04/23/2026 – There are 515 pieces pieces of Part Number FDB3632 Available.

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N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Specifications

TYPE DESCRIPTION
Case/Package TO-263-3
Contact Plating Tin
Mount Surface Mount
Number of Pins 3
Weight 1.31247 g
Continuous Drain Current (ID) 80 A
Current Rating 44 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 7.5 mΩ
Drain to Source Voltage (Vdss) 100 V
Dual Supply Voltage 100 V
Element Configuration Single
Fall Time 46 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 6 nF
Max Junction Temperature (Tj) 175 °C
Max Operating Temperature 175 °C
Max Power Dissipation 310 W
Min Operating Temperature -55 °C
Nominal Vgs 4 V
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 310 W
Rds On Max 9 mΩ
Resistance 9 MΩ
Rise Time 39 ns
Schedule B 8541290080
Termination SMD/SMT
Threshold Voltage 4 V
Turn-Off Delay Time 96 ns
Turn-On Delay Time 30 ns
Voltage Rating (DC) 100 V
Height 4.83 mm
Length 10.67 mm
Width 9.65 mm

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