Discrete Semiconductors > Transistors > MOSFETs > FDB1D7N10CL7
FDB1D7N10CL7
| Part Number: | FDB1D7N10CL7 |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > FDB1D7N10CL7 |
| Qty Available: | |
| Description: | Shielded Gate PowerTrench MOSFET N-Channel 100V 268A 1.7m Ohm 7-Pin D2PAK T/R |
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Shielded Gate PowerTrench MOSFET N-Channel 100V 268A 1.7m Ohm 7-Pin D2PAK T/R
Specifications
| TYPE | DESCRIPTION |
| Case/Package | D2PAK |
| Continuous Drain Current (ID) | 268 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 1.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Power Dissipation | 250 W |
| Turn-Off Delay Time | 85 ns |
| Turn-On Delay Time | 39 ns |
| Height | 4.9 mm |
Documentation for onsemi FDB1D7N10CL7
| Datasheet | View & Download FDB1D7N10CL7 Datasheet |
| Datasheet | View & Download FDB1D7N10CL7 Datasheet |
| Technical Drawing | View & Download FDB1D7N10CL7 Technical Drawing |
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