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           Discrete Semiconductors > Transistors > MOSFETs > FDB14N30TM

FDB14N30TM

Part Number: FDB14N30TM
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FDB14N30TM
Qty Available:
Description: N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK

04/23/2026 – There are 515 pieces pieces of Part Number FDB14N30TM Available.

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N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK

Specifications

TYPE DESCRIPTION
Case/Package D2PAK
Contact Plating Tin
Mount Surface Mount
Number of Pins 2
Weight 1.31247 g
Continuous Drain Current (ID) 14 A
Drain to Source Breakdown Voltage 300 V
Drain to Source Resistance 240 mΩ
Drain to Source Voltage (Vdss) 300 V
Dual Supply Voltage 300 V
Element Configuration Single
Fall Time 75 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 1.06 nF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 140 W
Min Operating Temperature -55 °C
Nominal Vgs 5 V
Number of Channels 1
Number of Elements 1
Power Dissipation 140 W
Rds On Max 290 mΩ
Resistance 290 MΩ
Rise Time 105 ns
Schedule B 8541290080
Termination SMD/SMT
Threshold Voltage 5 V
Turn-Off Delay Time 30 ns
Turn-On Delay Time 20 ns
Height 4.83 mm
Length 10.67 mm
Width 11.33 mm

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