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           Discrete Semiconductors > Transistors > MOSFETs > FDA59N30

FDA59N30

Part Number: FDA59N30
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > FDA59N30
Qty Available:
Description: N-Channel Power MOSFET, UniFETTM, 300V, 59A, 56mΩ, TO-3P

04/23/2026 – There are 515 pieces pieces of Part Number FDA59N30 Available.

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N-Channel Power MOSFET, UniFETTM, 300V, 59A, 56mΩ, TO-3P

Specifications

TYPE DESCRIPTION
Mount Through Hole
Number of Pins 3
Weight 6.401 g
Continuous Drain Current (ID) 59 A
Drain to Source Breakdown Voltage 300 V
Drain to Source Resistance 47 mΩ
Drain to Source Voltage (Vdss) 300 V
Element Configuration Single
Fall Time 200 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 4.67 nF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 500 W
Min Operating Temperature -55 °C
Nominal Vgs 5 V
Number of Channels 1
Number of Elements 1
Power Dissipation 500 W
Rds On Max 56 mΩ
Resistance 56 MΩ
Rise Time 575 ns
Schedule B 8541290080
Threshold Voltage 5 V
Turn-Off Delay Time 120 ns
Turn-On Delay Time 140 ns
Height 23.8 mm

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