Discrete Semiconductors > Transistors > MOSFETs > Diodes-Inc--ZXMN4A06GTA
Diodes Inc. ZXMN4A06GTA
| Part Number: | Diodes Inc. ZXMN4A06GTA |
| Manufacturer: | Diodes Inc. |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Diodes-Inc--ZXMN4A06GTA |
| Qty Available: | |
| Description: | Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223 |
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Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-223 |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Weight | 7.994566 mg |
| Continuous Drain Current (ID) | 7 A |
| Current Rating | 6.7 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance | 50 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Element Configuration | Single |
| Fall Time | 7.35 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 770 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3.9 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2 W |
| Rds On Max | 50 mΩ |
| Resistance | 75 mΩ |
| Rise Time | 4.45 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 1 V |
| Turn-Off Delay Time | 28.61 ns |
| Turn-On Delay Time | 2.55 ns |
| Voltage Rating (DC) | 40 V |
| Height | 1.65 mm |
| Length | 6.7 mm |
| Width | 3.7 mm |
Documentation for Diodes Inc. Diodes Inc. ZXMN4A06GTA
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