Discrete Semiconductors > Transistors > MOSFETs > Diodes-Inc--ZXMN10A07ZTA
Diodes Inc. ZXMN10A07ZTA
| Part Number: | Diodes Inc. ZXMN10A07ZTA |
| Manufacturer: | Diodes Inc. |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Diodes-Inc--ZXMN10A07ZTA |
| Qty Available: | |
| Description: | ZXMN10A07Z Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET - SOT-89 |
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ZXMN10A07Z Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET - SOT-89
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-89-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Weight | 130.492855 mg |
| Continuous Drain Current (ID) | 1.4 A |
| Current Rating | 700 mA |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 900 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 2.1 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 138 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.6 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2.6 W |
| Rds On Max | 700 mΩ |
| Resistance | 700 mΩ |
| Rise Time | 1.5 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 4.1 ns |
| Turn-On Delay Time | 1.8 ns |
| Voltage Rating (DC) | 100 V |
| Height | 1.6 mm |
| Length | 4.6 mm |
| Width | 2.6 mm |
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Documentation for Diodes Inc. Diodes Inc. ZXMN10A07ZTA
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