Discrete Semiconductors > Transistors > MOSFETs > Diodes-Inc--ZXM61P03FTA
Diodes Inc. ZXM61P03FTA
| Part Number: | Diodes Inc. ZXM61P03FTA |
| Manufacturer: | Diodes Inc. |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > Diodes-Inc--ZXM61P03FTA |
| Qty Available: | |
| Description: | ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23 |
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ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-23 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Weight | 7.994566 mg |
| Continuous Drain Current (ID) | 1.1 A |
| Current Rating | -1.1 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 550 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Dual Supply Voltage | -30 V |
| Element Configuration | Single |
| Fall Time | 2.9 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 140 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 625 mW |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 625 mW |
| Rds On Max | 350 mΩ |
| Resistance | 350 mΩ |
| Rise Time | 2.9 ns |
| Schedule B | 8541210080 |
| Termination | SMD/SMT |
| Threshold Voltage | 1 V |
| Turn-Off Delay Time | 8.9 ns |
| Turn-On Delay Time | 1.9 ns |
| Voltage Rating (DC) | -30 V |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Width | 1.4 mm |
Images
Documentation for Diodes Inc. Diodes Inc. ZXM61P03FTA
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