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           Discrete Semiconductors > Transistors > BJTs > Diodes-Inc--ZTX853

Diodes Inc. ZTX853

Part Number: Diodes Inc. ZTX853
Manufacturer: Diodes Inc.
Part Type: Discrete Semiconductors > Transistors > BJTs > Diodes-Inc--ZTX853
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Description: ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

04/21/2026 – There are 515 pieces pieces of Part Number Diodes Inc. ZTX853 Available.

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ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

Specifications

TYPE DESCRIPTION
Case/Package TO-92
Mount Through Hole
Number of Pins 3
Weight 453.59237 mg
Collector Base Voltage (VCBO) 200 V
Collector Emitter Breakdown Voltage 100 V
Collector Emitter Saturation Voltage 160 mV
Collector Emitter Voltage (VCEO) 100 V
Continuous Collector Current 4 A
Current Rating 4 A
Element Configuration Single
Emitter Base Voltage (VEBO) 6 V
Frequency 130 MHz
Gain Bandwidth Product 130 MHz
hFE Min 100
Max Collector Current 4 A
Max Frequency 130 MHz
Max Operating Temperature 200 °C
Max Power Dissipation 1.2 W
Manufacturer Package Identifier E-Line
Min Operating Temperature -55 °C
Number of Elements 1
Packaging Bulk
Polarity NPN
Power Dissipation 1.2 W
Transition Frequency 130 MHz
Voltage Rating (DC) 100 V
Height 4.01 mm
Length 4.77 mm
Width 2.41 mm

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