Discrete Semiconductors > Transistors > MOSFETs > CAB006M12GM3
CAB006M12GM3
| Part Number: | CAB006M12GM3 |
| Manufacturer: | Wolfspeed |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > CAB006M12GM3 |
| Qty Available: | |
| Description: | 1200V Silicon Carbide half-bridge power module with the highest usable ampacity in the industry |
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1200V Silicon Carbide half-bridge power module with the highest usable ampacity in the industry
Specifications
| TYPE | DESCRIPTION |
| Continuous Drain Current (ID) | 200 mA |
| Drain to Source Breakdown Voltage | 1.2 kV |
| Drain to Source Resistance | 5.3 mΩ |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate to Source Voltage (Vgs) | 19 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Schedule B | 8541290080 |
Alternate Descriptions
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