Discrete Semiconductors > Transistors > BJTs > BUL312FP
BUL312FP
| Part Number: | BUL312FP |
| Manufacturer: | STMicroelectronics |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > BUL312FP |
| Qty Available: | |
| Description: | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
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Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-220-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Collector Emitter Breakdown Voltage | 500 V |
| Collector Emitter Voltage (VCEO) | 500 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 9 V |
| hFE Min | 8 |
| Max Collector Current | 5 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 36 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 36 W |
Images
Documentation for STMicroelectronics BUL312FP
| Datasheet | View & Download BUL312FP Datasheet |
| Datasheet | View & Download BUL312FP Datasheet |
Alternate Descriptions
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