Discrete Semiconductors > Transistors > BJTs > BU508AF
BU508AF
| Part Number: | BU508AF |
| Manufacturer: | STMicroelectronics |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > BU508AF |
| Qty Available: | |
| Description: | Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
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Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Specifications
| TYPE | DESCRIPTION |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Collector Base Voltage (VCBO) | 9 V |
| Collector Emitter Breakdown Voltage | 700 V |
| Collector Emitter Saturation Voltage | 1 V |
| Collector Emitter Voltage (VCEO) | 700 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 9 V |
| Max Collector Current | 8 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 50 W |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Collector Base Voltage (VCBO) | 9 V |
| Collector Emitter Breakdown Voltage | 700 V |
| Collector Emitter Saturation Voltage | 1 V |
| Collector Emitter Voltage (VCEO) | 700 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 9 V |
| Max Collector Current | 8 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 50 W |
Documentation for STMicroelectronics BU508AF
| Datasheet | View & Download BU508AF Datasheet |
| Datasheet | View & Download BU508AF Datasheet |
| Datasheet | View & Download BU508AF Datasheet |
| Datasheet | View & Download BU508AF Datasheet |
| Datasheet | View & Download BU508AF Datasheet |
| Datasheet | View & Download BU508AF Datasheet |
Alternate Descriptions
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