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           Discrete Semiconductors > Transistors > BJTs > BU508AF

BU508AF

Part Number: BU508AF
Manufacturer: STMicroelectronics
Part Type: Discrete Semiconductors > Transistors > BJTs > BU508AF
Qty Available:
Description: Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

04/21/2026 – There are 515 pieces pieces of Part Number BU508AF Available.

PCX has STMicroelectronics Discrete Semiconductors > Transistors > BJTs > BU508AF Electronic Components for Sale.

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Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Specifications

TYPE DESCRIPTION
Contact Plating Tin
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 9 V
Collector Emitter Breakdown Voltage 700 V
Collector Emitter Saturation Voltage 1 V
Collector Emitter Voltage (VCEO) 700 V
Element Configuration Single
Emitter Base Voltage (VEBO) 9 V
Max Collector Current 8 A
Max Operating Temperature 150 °C
Max Power Dissipation 50 W
Min Operating Temperature -65 °C
Number of Elements 1
Polarity NPN
Power Dissipation 50 W
Contact Plating Tin
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 9 V
Collector Emitter Breakdown Voltage 700 V
Collector Emitter Saturation Voltage 1 V
Collector Emitter Voltage (VCEO) 700 V
Element Configuration Single
Emitter Base Voltage (VEBO) 9 V
Max Collector Current 8 A
Max Operating Temperature 150 °C
Max Power Dissipation 50 W
Min Operating Temperature -65 °C
Number of Elements 1
Polarity NPN
Power Dissipation 50 W

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