Discrete Semiconductors > Transistors > MOSFETs > BSS84

BSS84

onsemi

Part Number:	BSS84
Manufacturer:	onsemi
Part Type:	Discrete Semiconductors > Transistors > MOSFETs > BSS84
Qty Available:
Description:	Transistor, MOSFET, P-channel, small signal switch, 50V, 0.13A, SOT23 \| ON Semiconductor BSS84

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Transistor, MOSFET, P-channel, small signal switch, 50V, 0.13A, SOT23 | ON Semiconductor BSS84

Specifications

TYPE	DESCRIPTION
Case/Package	SOT-23
Contact Plating	Tin
Mount	Surface Mount
Number of Pins	3
Continuous Drain Current (ID)	130 mA
Current	13 A
Current Rating	-130 mA
Drain to Source Breakdown Voltage	-50 V
Drain to Source Resistance	10 Ω
Drain to Source Voltage (Vdss)	-50 V
Dual Supply Voltage	-50 V
Element Configuration	Single
Fall Time	6.3 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	73 pF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	360 mW
Min Operating Temperature	-55 °C
Nominal Vgs	-1.7 V
Number of Channels	1
Number of Elements	1
Packaging	Cut Tape
Power Dissipation	360 mW
Rds On Max	10 Ω
Resistance	10 Ω
Rise Time	6.3 ns
Schedule B	8541210080
Termination	SMD/SMT
Threshold Voltage	-1.7 V
Turn-Off Delay Time	10 ns
Turn-On Delay Time	2.5 ns
Voltage	50 V
Voltage Rating (DC)	-50 V
Height	930 µm
Length	2.92 mm
Width	3.05 mm

Images

Documentation for onsemi BSS84

Datasheet	View & Download BSS84 Datasheet
Technical Drawing	View & Download BSS84 Technical Drawing
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Technical Drawing	View & Download BSS84 Technical Drawing
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet
Datasheet	View & Download BSS84 Datasheet

Alternate Descriptions

Descriptions of onsemi BSS84 provided by its distributors.
Transistor, MOSFET, P-channel, small signal switch, 50V, 0.13A, SOT23 | ON Semiconductor BSS84
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23; BSS84-TP MCCSEMI; BSS84LT1G
P-Channel 50 V 10 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
P-Channel MOSFET, Enhancement Mode, -50V, -0.13A, 10Ω
P-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 0.13A 0.25W 50V 10Ohm
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = -50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 9.6 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET,P CH,50V,0.13A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs Typ:-1.7V; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360µW; Power Dissipation Ptot Max:360mW; Pulse Current Idm:520mA; SMD Marking:SP; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-5V; Voltage Vgs th Max:-2V

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