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           Discrete Semiconductors > Transistors > MOSFETs > BSS123LT1G

BSS123LT1G

Part Number: BSS123LT1G
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > BSS123LT1G
Qty Available:
Description: Transistor: N-MOSFET, unipolar, 100V, 0.17A, 6ohm, 225mW, -55+150 deg.C, SMD, SOT23, AEC-Q1

04/22/2026 – There are 515 pieces pieces of Part Number BSS123LT1G Available.

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Transistor: N-MOSFET, unipolar, 100V, 0.17A, 6ohm, 225mW, -55+150 deg.C, SMD, SOT23, AEC-Q1

Specifications

TYPE DESCRIPTION
Case/Package SOT-23
Contact Plating Tin
Mount Surface Mount
Number of Pins 3
Continuous Drain Current (ID) 170 mA
Current Rating 170 mA
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 6 Ω
Drain to Source Voltage (Vdss) 100 V
Element Configuration Single
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 20 pF
Max Operating Temperature 150 °C
Max Power Dissipation 225 mW
Min Operating Temperature -55 °C
Nominal Vgs 20 V
Number of Elements 1
Packaging Cut Tape
Power Dissipation 225 mW
Rds On Max 6 Ω
Resistance 6 Ω
Schedule B 8541210080
Threshold Voltage 800 mV
Turn-Off Delay Time 40 ns
Turn-On Delay Time 20 ns
Voltage Rating (DC) 100 V
Height 1.01 mm
Length 3.04 mm
Width 1.4 mm

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