Discrete Semiconductors > Transistors > MOSFETs > BSC600N25NS3GATMA1
BSC600N25NS3GATMA1
| Part Number: | BSC600N25NS3GATMA1 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > BSC600N25NS3GATMA1 |
| Qty Available: | |
| Description: | Transistor, MOSFET, N-channel normal level, 250V, 25A, 60mOhm, TDSON8 | Infineon BSC600N25NS3G |
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Transistor, MOSFET, N-channel normal level, 250V, 25A, 60mOhm, TDSON8 | Infineon BSC600N25NS3G
Specifications
| TYPE | DESCRIPTION |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Continuous Drain Current (ID) | 25 A |
| Drain to Source Resistance | 50 mΩ |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.77 nF |
| Max Dual Supply Voltage | 250 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 60 mΩ |
| Package Quantity | 5000 |
| Packaging | Tape & Reel |
| Power Dissipation | 125 W |
| Rise Time | 10 ns |
| Schedule B | 8541290080 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Continuous Drain Current (ID) | 25 A |
| Drain to Source Resistance | 50 mΩ |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.77 nF |
| Max Dual Supply Voltage | 250 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 60 mΩ |
| Package Quantity | 5000 |
| Packaging | Tape & Reel |
| Power Dissipation | 125 W |
| Rise Time | 10 ns |
| Schedule B | 8541290080 |
Documentation for Infineon BSC600N25NS3GATMA1
Alternate Descriptions
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